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Silicon Junction FETs (Small Signal)
2SK1104
Silicon N-Channel Junction FET
For switching Complementary to 2SJ164
4.00.2 2.00.2 (0.8) 3.00.2
unit: mm
I Features
G Low ON-resistance G Low-noise characteristics
I Absolute Maximum Ratings (Ta = 25C)
Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings -65 20 10 300 150 -55 to +150 Unit V mA mA mW C C
1 0.45+0.20 -0.10
15.60.5
(0.8)
0.75 max.
7.6
(2.5) (2.5)
0.45+0.20 -0.10 0.70.1
2
3
1: Source 2: Gate 3: Drain NS-B1 Package
I Electrical Characteristics (Ta = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Drain to Source ON-resistance Symbol IDSS* IGSS VGDS VGSC | Yfs | RDS(on) Coss Conditions VDS = 10V, VGS = 0 VGS = -30V, VDS = 0 IG = -10A, VDS = 0 VDS = 10V, ID = 10A VDS = 10V, ID = 1mA, f = 1kHz VDS = 10mV, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz 1.8 -65 -1.5 2.5 250 7 1.3 1.5 -3.5 min 0.2 typ max 6 -10 Unit mA nA V V mS pF pF pF
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss
*
IDSS rank classification Runk IDSS (mA) O 0.2 to 1 P 0.6 to 1.5 Q 1 to 3 R 2.5 to 6
257
Silicon Junction FETs (Small Signal)
PD Ta
400 2.5 Ta=25C 350 2.0 2.0 VGS=0V 1.5 - 0.1V - 0.2V 1.0 - 0.3V - 0.4V 0.5 50 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6 0 -1.2
2SK1104
ID VDS
2.5
ID VGS
Allowable power dissipation PD (mW)
Drain current ID (mA)
Drain current ID (mA)
300 250 200 150 100
Ta=-25C 1.5 25C 1.0 75C
0.5
-1.0 - 0.8 - 0.6 - 0.4 - 0.2
0
Ambient temperature Ta (C)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
| Yfs | VGS
5 2.5 VDS=10V Ta=25C 4
| Yfs | ID
Forward transfer admittance |Yfs| (mS)
VDS=10V Ta=25C
Ciss, Coss, Crss VDS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
10 VGS=0 f=1MHz Ta=25C 8
Forward transfer admittance |Yfs| (mS)
2.0 IDSS=10mA 1.5
3 IDSS=10mA 2
6
Ciss
1.0
4
1
0.5
2
Coss Crss
0 -1.6
0 -1.2 - 0.8 - 0.4 0 0 1 2 3 4 5 6 7 8
0 1 3 10 30 100
Gate to source voltage VGS (V)
Drain current ID (mA)
Drain to source voltage VDS (V)
258
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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